Based on aggregated insights from structured factory profiles within the CNFX directory, the standard CCD Detector Array used in the Computer, Electronic and Optical Product Manufacturing sector typically supports operational capacities ranging from standard industrial configurations to heavy-duty production requirements.
A canonical CCD Detector Array is characterized by the integration of Photosensitive Region and Charge Transfer Structure. In industrial production environments, manufacturers listed on CNFX commonly emphasize Silicon construction to support stable, high-cycle operation across diverse manufacturing scenarios.
A photosensitive electronic component that converts light signals into electrical signals for detection and measurement in optical spectrometers.
Technical details and manufacturing context for CCD Detector Array
Commonly used trade names and technical identifiers for CCD Detector Array.
This component is essential for the following industrial systems and equipment:
| pressure: | Atmospheric (sealed package, not pressure-rated) |
| other spec: | Max illumination: 100 mW/cm², Dark current: <0.1 nA/cm² at 25°C |
| temperature: | -20°C to +60°C (operating), -40°C to +85°C (storage) |
Manufacturer profiles with relevant production capability in China
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This CCD detector array is designed for optical spectrometers, where it converts light signals into electrical signals for precise detection and measurement in analytical instruments.
The detector is constructed using silicon as the photosensitive material, with silicon dioxide and polycrystalline silicon for insulation and circuitry, and aluminum for electrical connections.
The charge transfer structure efficiently moves accumulated electrical charges from the photosensitive region to the output amplifier, minimizing signal loss and enabling high-speed, low-noise readout for accurate measurements.
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