Based on aggregated insights from structured factory profiles within the CNFX directory, the standard Photodiode Array used in the Computer, Electronic and Optical Product Manufacturing sector typically supports operational capacities ranging from standard industrial configurations to heavy-duty production requirements.
A canonical Photodiode Array is characterized by the integration of Photodiode Element and Substrate. In industrial production environments, manufacturers listed on CNFX commonly emphasize Silicon (Si) construction to support stable, high-cycle operation across diverse manufacturing scenarios.
A linear or two-dimensional arrangement of multiple photodiodes integrated on a single semiconductor substrate for simultaneous detection of light intensity across multiple points.
Technical details and manufacturing context for Photodiode Array
Commonly used trade names and technical identifiers for Photodiode Array.
This component is essential for the following industrial systems and equipment:
| pressure: | Atmospheric to 1 atm (standard packaging), vacuum compatible with special packaging |
| other spec: | Wavelength range: 200-1100 nm (typical), Dark current: 0.1-100 nA, Response time: 1-100 ns |
| temperature: | -40°C to +85°C (operational), -55°C to +125°C (storage) |
Manufacturer profiles with relevant production capability in China
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Photodiode arrays are essential for spectral analysis, imaging systems, optical character recognition, barcode scanning, and light measurement in various electronic and optical devices.
Silicon arrays work best for visible light, Germanium for near-infrared, and InGaAs for extended infrared ranges. Material selection determines spectral response, sensitivity, and operating temperature range.
Key considerations include array geometry (linear vs. 2D), pixel pitch and uniformity, dark current, response time, spectral range matching, and proper interface with readout electronics through bonding pads.
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