Based on aggregated insights from structured factory profiles within the CNFX directory, the standard Photodetector Module used in the Computer, Electronic and Optical Product Manufacturing sector typically supports operational capacities ranging from standard industrial configurations to heavy-duty production requirements.
A canonical Photodetector Module is characterized by the integration of Photodiode Chip and Transimpedance Amplifier (TIA). In industrial production environments, manufacturers listed on CNFX commonly emphasize Semiconductor (e.g., Silicon, InGaAs) construction to support stable, high-cycle operation across diverse manufacturing scenarios.
A modular electronic component that converts incident light into an electrical signal.
Technical details and manufacturing context for Photodetector Module
Commonly used trade names and technical identifiers for Photodetector Module.
This component is essential for the following industrial systems and equipment:
| pressure: | 0 to 1 atm (standard atmospheric) |
| other spec: | Wavelength range: 400-1100 nm, Response time: <10 ns |
| temperature: | -40°C to +85°C |
Manufacturer profiles with relevant production capability in China
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Our photodetector modules typically offer response times ranging from nanoseconds to microseconds, depending on the semiconductor material and TIA configuration, making them suitable for high-speed optical detection applications.
Yes, the protective metal/plastic housing and ceramic/PCB substrate provide excellent durability against dust, moisture, and temperature variations, ensuring reliable performance in demanding industrial settings.
Silicon photodiodes cover 190-1100 nm for visible/NIR detection, while InGaAs sensors extend to 800-2600 nm for specialized infrared applications. Optical filters can be customized for specific wavelength bands.
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